Invention Grant
US08372725B2 Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates
有权
形成用于SOI衬底的预制深沟槽电容器的结构和方法
- Patent Title: Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates
- Patent Title (中): 形成用于SOI衬底的预制深沟槽电容器的结构和方法
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Application No.: US12710553Application Date: 2010-02-23
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Publication No.: US08372725B2Publication Date: 2013-02-12
- Inventor: Robert Hannon , Subramanian S. Iyer , Gerd Pfeiffer , Ravi M. Todi , Kevin R. Winstel
- Applicant: Robert Hannon , Subramanian S. Iyer , Gerd Pfeiffer , Ravi M. Todi , Kevin R. Winstel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Matthew Zehrer
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
Structures and methods are provided for forming pre-fabricated deep trench capacitors for SOI substrates. The method includes forming a trench in a substrate and forming a dielectric material in the trench. The method further includes depositing a conductive material over the dielectric material in the trench and forming an insulator layer over the conductive material and the substrate.
Public/Granted literature
- US20110204524A1 STRUCTURES AND METHODS OF FORMING PRE FABRICATED DEEP TRENCH CAPACITORS FOR SOI SUBSTRATES Public/Granted day:2011-08-25
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