Invention Grant
US08372746B2 Electrode of semiconductor device and method for fabricating capacitor
失效
半导体器件的电极及制造电容器的方法
- Patent Title: Electrode of semiconductor device and method for fabricating capacitor
- Patent Title (中): 半导体器件的电极及制造电容器的方法
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Application No.: US12824670Application Date: 2010-06-28
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Publication No.: US08372746B2Publication Date: 2013-02-12
- Inventor: Kwan-Woo Do , Kee-Jeung Lee , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant: Kwan-Woo Do , Kee-Jeung Lee , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0117424 20091130
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.
Public/Granted literature
- US20110128668A1 ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING CAPACITOR Public/Granted day:2011-06-02
Information query
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