Invention Grant
- Patent Title: Methods for removing photoresist defects and a method for processing a semiconductor device structure
- Patent Title (中): 去除光刻胶缺陷的方法和半导体器件结构的处理方法
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Application No.: US11786306Application Date: 2007-04-11
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Publication No.: US08372754B2Publication Date: 2013-02-12
- Inventor: Robert J. Hanson , Siddartha Kondoju
- Applicant: Robert J. Hanson , Siddartha Kondoju
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.
Public/Granted literature
- US20080254637A1 Methods for removing photoresist defects and a source gas for same Public/Granted day:2008-10-16
Information query
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