Invention Grant
US08372760B2 Method and system for using ion implantation for treating a low-k dielectric film
有权
用于处理低k电介质膜的离子注入的方法和系统
- Patent Title: Method and system for using ion implantation for treating a low-k dielectric film
- Patent Title (中): 用于处理低k电介质膜的离子注入的方法和系统
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Application No.: US10857935Application Date: 2004-06-02
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Publication No.: US08372760B2Publication Date: 2013-02-12
- Inventor: Kenneth Duerksen , David A. Vidusek
- Applicant: Kenneth Duerksen , David A. Vidusek
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.
Public/Granted literature
- US20050012201A1 Method and system for using ion implantation for treating a low-k dielectric film Public/Granted day:2005-01-20
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