Invention Grant
US08372761B2 Plasma oxidation processing method, plasma processing apparatus and storage medium
有权
等离子体氧化处理方法，等离子体处理装置和存储介质
- Patent Title: Plasma oxidation processing method, plasma processing apparatus and storage medium
- Patent Title (中): 等离子体氧化处理方法，等离子体处理装置和存储介质
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Application No.: US12594078Application Date: 2008-03-28
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Publication No.: US08372761B2Publication Date: 2013-02-12
- Inventor: Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
- Applicant: Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2007-091700 20070330
- International Application: PCT/JP2008/056134 WO 20080328
- International Announcement: WO2008/123431 WO 20081016
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.
Public/Granted literature
- US20100136797A1 PLASMA OXIDATION PROCESSING METHOD, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM Public/Granted day:2010-06-03
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