Invention Grant
- Patent Title: Manufacturing method of semiconductor device and laser processing apparatus
- Patent Title (中): 半导体器件和激光加工设备的制造方法
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Application No.: US12793229Application Date: 2010-06-03
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Publication No.: US08372762B2Publication Date: 2013-02-12
- Inventor: Hirotada Oishi , Koichiro Tanaka
- Applicant: Hirotada Oishi , Koichiro Tanaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2006-255863 20060921
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/26 ; H01L29/76 ; B23K26/14 ; B23K26/06

Abstract:
In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other.
Public/Granted literature
- US20100301026A1 Manufacturing Method of Semiconductor Device and Laser Processing Apparatus Public/Granted day:2010-12-02
Information query
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