Invention Grant
- Patent Title: Method of manufacturing a contact
- Patent Title (中): 制造接触的方法
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Application No.: US12064530Application Date: 2006-08-23
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Publication No.: US08373091B2Publication Date: 2013-02-12
- Inventor: Hiroyuki Moriuchi , Hideo Omori , Haruki Shimizu
- Applicant: Hiroyuki Moriuchi , Hideo Omori , Haruki Shimizu
- Applicant Address: JP Tokyo
- Assignee: DDK, Ltd.
- Current Assignee: DDK, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP2005-241086 20050823
- International Application: PCT/JP2006/317025 WO 20060823
- International Announcement: WO2007/024005 WO 20070301
- Main IPC: B23K26/38
- IPC: B23K26/38 ; H01R43/16 ; H01R13/03 ; H05K3/34

Abstract:
A microcontact according to the invention is less than 10 mm in length and composed of a conductive basis material, a base surface treatment layer formed thereon, and an upper surface treatment layer, and includes a contact portion, a terminal portion, and an intermediate portion formed over its entire circumference with exposed oxide surfaces of the base surface treatment layer. The exposed oxide surfaces are formed by irradiating the front and rear surfaces of the contact with laser beams at respective predetermined inclined angles to remove the upper surface treatment layer and simultaneously to oxidize the narrow base surface treatment layer exposed by the removal of the upper surface treatment layer. In this manner, the exposed oxide surfaces can be formed with a high accuracy in a simple manner for stopping solder rise at a predetermined position when the terminal portion of the microcontact is jointed to a substrate by soldering.
Public/Granted literature
- US20090149088A1 MICROCONTACT, METHOD FOR PRODUCING THE SAME AND ELECTRONIC COMPONENT Public/Granted day:2009-06-11
Information query
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