An infrared detection circuit includes a charge transferring transistor, a gate control circuit and a negative potential generating circuit. The charge transferring transistor is disposed between a read node configured to be connected to one end of an infrared detection element and a tank node to transfer an electric charge from the infrared detection element to the tank node. The gate control circuit is connected to a gate of the charge transferring transistor. The negative potential generating circuit is connected to the tank node to set the tank node to a negative electric potential when the charge transferring transistor transfers the electric charge.