Invention Grant
- Patent Title: Electrical isolation of X-ray semiconductor imager pixels
- Patent Title (中): X射线半导体成像器像素的电气隔离
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Application No.: US12809079Application Date: 2008-12-26
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Publication No.: US08373134B2Publication Date: 2013-02-12
- Inventor: Ewald Roessl , Roland Proksa
- Applicant: Ewald Roessl , Roland Proksa
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee Address: NL Eindhoven
- Priority: CN200710306621 20071228
- International Application: PCT/IB2008/055539 WO 20081226
- International Announcement: WO2009/083920 WO 20090709
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
To mitigate the influence of charge sharing occurring in semiconductor detectors, an improved semiconductor detector (200) is provided, which comprises: a plurality of anodes (210) arranged to form at least one opening (230), each opening being formed by two anodes in the plurality of anodes; at least one cathode (220); a detector cell (240) located between the plurality of anodes and the at least one cathode; wherein the detector cell comprises at least one groove (250), each of the at least one groove having a first opening (252) aligned with one of the at least one opening being formed by two anodes in the plurality of anodes, each of the at least one groove extending towards the at least one cathode. By forming grooves in the detector cell, the charge cloud generated by a single photon can be received by a corresponding anode instead of several neighboring anodes, which thereby improves the spectral resolution and count rate of a semiconductor detector.
Public/Granted literature
- US20110019794A1 ELECTRICAL ISOLATION OF X-RAY SEMICONDUCTOR IMAGER PIXELS Public/Granted day:2011-01-27
Information query
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