Invention Grant
US08373151B2 Write-once memory array including phase-change elements and threshold switch isolation
有权
一次写入存储器阵列，包括相变元件和阈值开关隔离
- Patent Title: Write-once memory array including phase-change elements and threshold switch isolation
- Patent Title (中): 一次写入存储器阵列，包括相变元件和阈值开关隔离
-
Application No.: US12565224Application Date: 2009-09-23
-
Publication No.: US08373151B2Publication Date: 2013-02-12
- Inventor: Ward Parkinson
- Applicant: Ward Parkinson
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agent Kevin L. Bray
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/04
Abstract:
A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
Public/Granted literature
- US20100012918A1 Write-Once Memory Array including Phase-Change Elements and Threshold Switch Isolation Public/Granted day:2010-01-21
Information query
IPC分类:
