Invention Grant
- Patent Title: Semiconductor light-emitting device and manufacturing method
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13229663Application Date: 2011-09-09
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Publication No.: US08373182B2Publication Date: 2013-02-12
- Inventor: Toshihiro Seko , Kosaburo Ito
- Applicant: Toshihiro Seko , Kosaburo Ito
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenealy Vaidya LLP
- Priority: JP2010-201985 20100909
- Main IPC: H01L33/62
- IPC: H01L33/62

Abstract:
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.
Public/Granted literature
- US20120235169A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD Public/Granted day:2012-09-20
Information query
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