Invention Grant
- Patent Title: Nitride based semiconductor device and method for manufacturing of the same
- Patent Title (中): 氮化物基半导体器件及其制造方法
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Application No.: US12842303Application Date: 2010-07-23
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Publication No.: US08373200B2Publication Date: 2013-02-12
- Inventor: Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
- Applicant: Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
- Applicant Address: KR Suwon
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0034373 20100414
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
Public/Granted literature
- US20110254057A1 NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF THE SAME Public/Granted day:2011-10-20
Information query
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