Invention Grant
- Patent Title: Integrated circuit chips with fine-line metal and over-passivation metal
- Patent Title (中): 集成电路芯片与细线金属和过钝化金属
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Application No.: US11864931Application Date: 2007-09-29
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Publication No.: US08373202B2Publication Date: 2013-02-12
- Inventor: Mou-Shiung Lin , Jin-Yuan Lee , Chien-Kang Chou
- Applicant: Mou-Shiung Lin , Jin-Yuan Lee , Chien-Kang Chou
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Priority: TW95136115A 20060929
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L21/70

Abstract:
An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.
Public/Granted literature
- US20080111242A1 INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL Public/Granted day:2008-05-15
Information query
IPC分类: