Invention Grant
US08373205B2 Signal quality of field effect transistor-based humidity sensors or gas sensors
有权
基于场效应晶体管的湿度传感器或气体传感器的信号质量
- Patent Title: Signal quality of field effect transistor-based humidity sensors or gas sensors
- Patent Title (中): 基于场效应晶体管的湿度传感器或气体传感器的信号质量
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Application No.: US12585792Application Date: 2009-09-24
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Publication No.: US08373205B2Publication Date: 2013-02-12
- Inventor: Maximilian Fleischer , Roland Pohle , Oliver von Sicard
- Applicant: Maximilian Fleischer , Roland Pohle , Oliver von Sicard
- Applicant Address: DE Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DE Munich
- Agency: Staas & Halsey LLP
- Priority: DE102008048715 20080924
- Main IPC: G01N27/403
- IPC: G01N27/403 ; G01N27/12

Abstract:
Humidity or a gas concentration or a solvent concentration in at least one gas is detected by a field effect transistor-based gas sensor whose sensor signal is generated by the change in the work function on a sensitive film. Detection is to be provided in a simple, effective and inexpensive manner. An additional change in potential is impressed at a gate of the field effect transistor and a variable of the resulting change in the sensor signal relative to the additional change in potential is evaluated. For example, each variable, which is e.g. a ratio, can be assigned a relative humidity, a gas concentration, or a solvent concentration. Sensitive films having at least one polymer are particularly advantageous.
Public/Granted literature
- US20100071460A1 Signal quality of field effect transistor-based humidity sensors or gas sensors Public/Granted day:2010-03-25
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