Invention Grant
- Patent Title: Semiconductor device and semiconductor device manufacturing method
- Patent Title (中): 半导体器件和半导体器件制造方法
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Application No.: US12755854Application Date: 2010-04-07
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Publication No.: US08373210B2Publication Date: 2013-02-12
- Inventor: Hiroaki Ikeda , Mitsuru Shiozaki , Atsushi Iwata
- Applicant: Hiroaki Ikeda , Mitsuru Shiozaki , Atsushi Iwata
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-093791 20090408
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device includes a pair of electromagnetically coupled inductors. Each of the inductors is comprised of a plurality of through electrodes which extend through a semiconductor substrate, and wires which connect the plurality of through electrodes in series.
Public/Granted literature
- US20100308434A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-12-09
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