Invention Grant
US08373224B2 Super-junction trench MOSFET with resurf stepped oxides and trenched contacts
有权
超结沟槽MOSFET，具有阶梯式氧化物和沟槽接触
- Patent Title: Super-junction trench MOSFET with resurf stepped oxides and trenched contacts
- Patent Title (中): 超结沟槽MOSFET，具有阶梯式氧化物和沟槽接触
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Application No.: US13291442Application Date: 2011-11-08
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Publication No.: US08373224B2Publication Date: 2013-02-12
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A super-junction trench MOSFET with Resurf Stepped Oxide and trenched contacts is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . Furthermore, the fabrication method can be implemented more reliably with lower cost.
Public/Granted literature
- US20120074489A1 SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS Public/Granted day:2012-03-29
Information query
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