Invention Grant
US08373225B2 Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes
有权
具有Resurf阶梯式氧化物和分离栅电极的超结沟槽MOSFET
- Patent Title: Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes
- Patent Title (中): 具有Resurf阶梯式氧化物和分离栅电极的超结沟槽MOSFET
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Application No.: US13303474Application Date: 2011-11-23
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Publication No.: US08373225B2Publication Date: 2013-02-12
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. Furthermore, the fabrication method can be implemented more reliably with lower cost.
Public/Granted literature
- US20120061754A1 SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND SPLIT GATE ELECTRODES Public/Granted day:2012-03-15
Information query
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