Invention Grant
- Patent Title: Sensor device having a structure element
- Patent Title (中): 具有结构元件的传感器装置
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Application No.: US13359195Application Date: 2012-01-26
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Publication No.: US08373240B2Publication Date: 2013-02-12
- Inventor: Klaus Elian , Georg Meyer-Berg , Horst Theuss
- Applicant: Klaus Elian , Georg Meyer-Berg , Horst Theuss
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L31/0203 ; B81B3/00 ; G01L9/00 ; H04R23/00
Abstract:
A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.
Public/Granted literature
- US20120126344A1 SENSOR DEVICE AND METHOD Public/Granted day:2012-05-24
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