Invention Grant
US08373246B2 Semiconductor device comprising stack of pn junction diode and schottky barrier diode
有权
包括pn结二极管和肖特基势垒二极管的堆叠的半导体器件
- Patent Title: Semiconductor device comprising stack of pn junction diode and schottky barrier diode
- Patent Title (中): 包括pn结二极管和肖特基势垒二极管的堆叠的半导体器件
-
Application No.: US12816499Application Date: 2010-06-16
-
Publication No.: US08373246B2Publication Date: 2013-02-12
- Inventor: Seiji Miyoshi , Tetsuya Okada , Shiho Arimoto
- Applicant: Seiji Miyoshi , Tetsuya Okada , Shiho Arimoto
- Applicant Address: JP Ora-gun US AZ Phoenix
- Assignee: SANYO Semiconductor Co., Ltd.,Semiconductor Components Industries, LLC
- Current Assignee: SANYO Semiconductor Co., Ltd.,Semiconductor Components Industries, LLC
- Current Assignee Address: JP Ora-gun US AZ Phoenix
- Agency: Morrison & Foerster LLP
- Priority: JP2009-146037 20090619
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.
Public/Granted literature
- US20100320557A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-23
Information query
IPC分类:
