Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12721151Application Date: 2010-03-10
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Publication No.: US08373251B2Publication Date: 2013-02-12
- Inventor: Shinichi Uchida , Masayuki Furumiya , Hiroshi Sakakibara , Takashi Iwadare , Yoshiyuki Sato , Makoto Eguchi , Masato Taki , Hidetoshi Morishita , Kozo Kato , Jun Morimoto
- Applicant: Shinichi Uchida , Masayuki Furumiya , Hiroshi Sakakibara , Takashi Iwadare , Yoshiyuki Sato , Makoto Eguchi , Masato Taki , Hidetoshi Morishita , Kozo Kato , Jun Morimoto
- Applicant Address: JP Kanagawa JP Toyota-Shi
- Assignee: Renesas Electronics Corporation,Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Renesas Electronics Corporation,Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Kanagawa JP Toyota-Shi
- Agency: Young & Thompson
- Priority: JP2009-061269 20090313
- Main IPC: H01L27/08
- IPC: H01L27/08

Abstract:
A first semiconductor chip includes a first inductor and a second inductor, and a second semiconductor chip includes a third inductor and a fourth inductor. The first inductor is connected to a first receiving circuit of the first semiconductor chip, and the second inductor is connected to a second transmitting circuit of the second semiconductor chip through a first bonding wire. The third inductor is connected to a second receiving circuit of the second semiconductor chip, and the fourth inductor is connected to a first transmitting circuit of the first semiconductor chip through a second bonding wire.
Public/Granted literature
- US20100230782A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
Information query
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