Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US12875455Application Date: 2010-09-03
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Publication No.: US08373253B2Publication Date: 2013-02-12
- Inventor: Han-Chung Tai , Hsin-Chih Chiang
- Applicant: Han-Chung Tai , Hsin-Chih Chiang
- Applicant Address: TW Taipei
- Assignee: System General Corp.
- Current Assignee: System General Corp.
- Current Assignee Address: TW Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: CN201010169798 20100423
- Main IPC: H01L29/861
- IPC: H01L29/861
Abstract:
A semiconductor structure. The semiconductor comprises a substrate, a first deep well, a diode and a transistor. The first deep well is formed in the substrate. The diode is formed in the first deep well. The transistor is formed in the first deep well. The diode is connected to a first voltage, the transistor is connected to a second voltage, and the diode and the transistor are cascaded.
Public/Granted literature
- US20110260291A1 Semiconductor Structure Public/Granted day:2011-10-27
Information query
IPC分类:
