Invention Grant
- Patent Title: Structure for reducing integrated circuit corner peeling
- Patent Title (中): 减少集成电路拐角剥离的结构
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Application No.: US12181663Application Date: 2008-07-29
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Publication No.: US08373254B2Publication Date: 2013-02-12
- Inventor: Hsien-Wei Chen , Yu-Wen Liu , Hao-Yi Tsai
- Applicant: Hsien-Wei Chen , Yu-Wen Liu , Hao-Yi Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L23/58

Abstract:
A crack prevention structure that reduces integrated circuit corner peeling and reduces cracking is disclosed. The crack prevention structure comprises a semiconductor substrate; a first plurality of dielectric layers of a first material disposed over the semiconductor substrate; a second plurality of dielectric layers of a second material different than the first material, disposed on the first plurality of dielectric layers, wherein the first plurality of dielectric layers and the second plurality of dielectric layers meet at an interface; and a plurality of metal structures and a plurality of via structures formed through the interface of the first plurality of dielectric layers and the second plurality of dielectric layers.
Public/Granted literature
- US20100025824A1 Structure for Reducing Integrated Circuit Corner Peeling Public/Granted day:2010-02-04
Information query
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