Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12682677Application Date: 2008-10-09
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Publication No.: US08373284B2Publication Date: 2013-02-12
- Inventor: Toshinobu Ogatsu
- Applicant: Toshinobu Ogatsu
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-264369 20071010
- International Application: PCT/JP2008/068354 WO 20081009
- International Announcement: WO2009/048097 WO 20090416
- Main IPC: H01L23/31
- IPC: H01L23/31
Abstract:
A semiconductor device carries a semiconductor component on a substrate and having an underfill resin applied in a gap between the substrate and the semiconductor component. The semiconductor device comprises: a lyophilic area in a portion of a region of one or both of the substrate and the semiconductor component which is in contact with the underfill resin. The lyophilic area is processed to exhibit lyophilicity with respect at least to the liquid underfill resin in comparison with an ambient region of the lyophilic area.
Public/Granted literature
- US20100213622A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-08-26
Information query
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