Invention Grant
- Patent Title: Surface acoustic wave device
- Patent Title (中): 表面声波装置
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Application No.: US13432006Application Date: 2012-03-28
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Publication No.: US08373329B2Publication Date: 2013-02-12
- Inventor: Norihiko Nakahashi
- Applicant: Norihiko Nakahashi
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2009-240202 20091019
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h/λ of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h/λ of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h/λ of the dielectric layer is about 0.2 or less.
Public/Granted literature
- US20120187799A1 SURFACE ACOUSTIC WAVE DEVICE Public/Granted day:2012-07-26
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