Invention Grant
- Patent Title: Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof
- Patent Title (中): 透明导电膜的构图方法，使用其的薄膜晶体管基板及其制造方法
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Application No.: US12982682Application Date: 2010-12-30
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Publication No.: US08373339B2Publication Date: 2013-02-12
- Inventor: Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
- Applicant: Byung Chul Ahn , Byoung Ho Lim , Byeong Dae Choi
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR2003-8159 20030210; KR2003-19782 20030329
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
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