Invention Grant
US08373457B2 Power-up signal generation circuit in semiconductor integrated circuit
有权
半导体集成电路中的上电信号发生电路
- Patent Title: Power-up signal generation circuit in semiconductor integrated circuit
- Patent Title (中): 半导体集成电路中的上电信号发生电路
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Application No.: US12648315Application Date: 2009-12-29
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Publication No.: US08373457B2Publication Date: 2013-02-12
- Inventor: Dong-Geum Kang
- Applicant: Dong-Geum Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0131136 20091224
- Main IPC: H03L7/00
- IPC: H03L7/00
Abstract:
A power-up signal generation circuit includes a main driving unit configured to drive a power-up detection node according to power supply voltage level information; an auxiliary driving unit configured to additionally drive the power-up detection node according to temperature information; and an output unit configured to output a power-up signal in response to a voltage change of the power-up detection node in accordance with the operations of the main driving unit and the auxiliary driving unit.
Public/Granted literature
- US20110156769A1 POWER-UP SIGNAL GENERATION CIRCUIT IN SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-06-30
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