Invention Grant
- Patent Title: Power-on reset circuit
- Patent Title (中): 上电复位电路
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Application No.: US13005264Application Date: 2011-01-12
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Publication No.: US08373459B2Publication Date: 2013-02-12
- Inventor: Santiago Iriarte Garcia , Johannes Gerber , Bernhard Wolfgang Ruck
- Applicant: Santiago Iriarte Garcia , Johannes Gerber , Bernhard Wolfgang Ruck
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Robert D. Marshall, Jr.; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
An integrated circuit provides a power on reset signal with respect to a supply voltage level supplying the electronic device. The integrated circuit comprises a bias current generating stage having a first current mirror and an output stage having first, second and third series connected MOS transistors. A connection between the second MOS transistor and the third MOS transistor forms a POR output node. A gate of the second MOS transistor and a gate of the third MOS transistor are coupled to each other and to the first current mirror. This allows a current through the third MOS transistor when the supply voltage is higher than a first MOS transistor threshold and a current through the second MOS transistor only when the supply voltage is greater than or equal to the sum of the first MOS transistor threshold and a second MOS transistor threshold voltage.
Public/Granted literature
- US20120286833A1 Power-On Reset Circuit Public/Granted day:2012-11-15
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