Invention Grant
- Patent Title: Voltage biasing circuit and data processing system having the same
- Patent Title (中): 电压偏置电路和数据处理系统相同
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Application No.: US12684459Application Date: 2010-01-08
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Publication No.: US08373500B2Publication Date: 2013-02-12
- Inventor: Jin Hyuck Yu
- Applicant: Jin Hyuck Yu
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0002494 20090113
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor.
Public/Granted literature
- US20100177232A1 VOLTAGE BIASING CIRCUIT AND DATA PROCESSING SYSTEM HAVING THE SAME Public/Granted day:2010-07-15
Information query
IPC分类: