Invention Grant
- Patent Title: Resistor having parallel structure and method of fabricating the same
- Patent Title (中): 具有平行结构的电阻器及其制造方法
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Application No.: US12923574Application Date: 2010-09-28
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Publication No.: US08373537B2Publication Date: 2013-02-12
- Inventor: Mi Jin Park , Young Do Kweon , Jin Gu Kim
- Applicant: Mi Jin Park , Young Do Kweon , Jin Gu Kim
- Applicant Address: KR Suwon
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon
- Priority: KR10-2010-0042604 20100506
- Main IPC: H01C1/012
- IPC: H01C1/012

Abstract:
There are provided a resistor and a method of fabricating the same. The resistor includes: a substrate; a lower resistant material layer formed on the upper portion of the substrate; an insulating layer to be stacked on the upper portion of the lower resistant material layer; an upper resistant material layer to be stacked on the upper portion of the insulating layer; and two penetration parts vertically penetrating through the insulating layer, wherein the penetration part is filled with a resistant material having the same component as that of the lower resistant material layer and the upper resistant material layer to electrically connect the upper resistant material layer to the lower resistant material layer.
Public/Granted literature
- US20110273266A1 Resistor having parallel structure and method of fabricating the same Public/Granted day:2011-11-10
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