Invention Grant
US08373785B2 Shallow trench isolation for active devices mounted on a CMOS substrate
有权
用于安装在CMOS基板上的有源器件的浅沟槽隔离
- Patent Title: Shallow trench isolation for active devices mounted on a CMOS substrate
- Patent Title (中): 用于安装在CMOS基板上的有源器件的浅沟槽隔离
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Application No.: US13295895Application Date: 2011-11-14
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Publication No.: US08373785B2Publication Date: 2013-02-12
- Inventor: Esin Terzioglu
- Applicant: Esin Terzioglu
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox, PLLC
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H01L31/062 ; H01L31/113 ; H01L27/00

Abstract:
The present invention includes operational amplifier for an active pixel sensor that detects optical energy and generates an analog output that is proportional to the optical energy. The active pixel sensor operates in a number of different modes including: signal integration mode, the reset integration mode, column reset mode, and column signal readout mode. Each mode causes the operational amplifier to see a different output load. Accordingly, the operational amplifier includes a variable feedback circuit to provide compensation that provides sufficient amplifier stability for each operating mode of the active pixel sensor. For instance, the operational amplifier includes a bank of feedback capacitors, one or more of which are selected based on the operating mode to provide sufficient phase margin for stability, but also considering gain and bandwidth requirements of the operating mode.
Public/Granted literature
- US20120056675A1 Operational Amplifier For An Active Pixel Sensor Public/Granted day:2012-03-08
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