Invention Grant
US08373832B2 Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
有权
接线层,半导体器件和使用半导体器件的液晶显示器件
- Patent Title: Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
- Patent Title (中): 接线层,半导体器件和使用半导体器件的液晶显示器件
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Application No.: US13503699Application Date: 2010-10-21
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Publication No.: US08373832B2Publication Date: 2013-02-12
- Inventor: Satoru Takasawa , Masanori Shirai , Satoru Ishibashi
- Applicant: Satoru Takasawa , Masanori Shirai , Satoru Ishibashi
- Applicant Address: JP Chigasaki-shi
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP Chigasaki-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-246939 20091027
- International Application: PCT/JP2010/068576 WO 20101021
- International Announcement: WO2011/052471 WO 20110505
- Main IPC: G02F1/1343
- IPC: G02F1/1343

Abstract:
An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.
Public/Granted literature
- US20120262659A1 WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE Public/Granted day:2012-10-18
Information query
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