Invention Grant
US08373832B2 Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device 有权
接线层,半导体器件和使用半导体器件的液晶显示器件

Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
Abstract:
An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.
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