Invention Grant
- Patent Title: Exposure control apparatus, manufacturing method of semiconductor device, and exposure apparatus
- Patent Title (中): 曝光控制装置，半导体装置的制造方法以及曝光装置
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Application No.: US12832600Application Date: 2010-07-08
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Publication No.: US08373845B2Publication Date: 2013-02-12
- Inventor: Tadahito Fujisawa
- Applicant: Tadahito Fujisawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-191259 20090820
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/42 ; G03B27/68 ; G03B27/32
Abstract:
According to one embodiment, an exposure control apparatus includes exposure setting unit that performs an exposure setting of setting an exposure shot as a shot that is exposed or a shot that is not exposed based on height information on a height of a substrate in the exposure shot arranged in a substrate peripheral portion, and an exposure instructing unit that outputs an exposure instruction to the shot that is exposed and an instruction to skip an exposure to the shot that is not exposed.
Public/Granted literature
- US20110043776A1 EXPOSURE CONTROL APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND EXPOSURE APPARATUS Public/Granted day:2011-02-24
Information query
