Invention Grant
US08373948B2 Tunnel magnetoresistance (TMR) structures with MGO barrier and methods of making same
有权
具有MGO屏障的隧道磁阻（TMR）结构及其制造方法
- Patent Title: Tunnel magnetoresistance (TMR) structures with MGO barrier and methods of making same
- Patent Title (中): 具有MGO屏障的隧道磁阻（TMR）结构及其制造方法
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Application No.: US12110681Application Date: 2008-04-28
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Publication No.: US08373948B2Publication Date: 2013-02-12
- Inventor: Alexander M. Zeltser
- Applicant: Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A method in one embodiment includes forming a first layer of magnesium above at least one of a free layer and a reference layer; exposing the first layer of magnesium to an oxidizing environment for causing oxidation of the first layer of magnesium; forming a second layer of magnesium above the oxidized first layer of magnesium; and exposing the second layer of magnesium to the oxidizing environment for causing oxidation of the second layer of magnesium. A system in one embodiment includes a free layer; and a tunnel barrier layer having microstructure and composition characteristic of in situ natural oxidation of magnesium. Additional systems and methods are also presented.
Public/Granted literature
- US20090268351A1 TUNNEL MAGNETORESISTANCE (TMR) STRUCTURES WITH MGO BARRIER AND METHODS OF MAKING SAME Public/Granted day:2009-10-29
Information query
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