Invention Grant
- Patent Title: Low leakage electrostatic discharge protection circuit
- Patent Title (中): 低泄漏静电放电保护电路
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Application No.: US12943980Application Date: 2010-11-11
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Publication No.: US08373956B2Publication Date: 2013-02-12
- Inventor: Michel J. Abou-Khalil , Kiran V. Chatty , Chee Kwang Quek , Robert J. Gauthier, Jr. , Nathaniel Peachey
- Applicant: Michel J. Abou-Khalil , Kiran V. Chatty , Chee Kwang Quek , Robert J. Gauthier, Jr. , Nathaniel Peachey
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Michael LeStrange
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06
Abstract:
A circuit and method for electrostatic discharge (ESD) protection. The ESD protection circuit includes: a silicon control rectifier (SCR) connected between a first voltage rail and a second voltage rail; one or more diodes connected in series in a forward conduction direction between the first voltage rail and a source of a p-channel field effect transistor (PFET); a drain of the PFET connected to the SCR and connected to ground through a current trigger device; and a control circuit connected to the gate of the PFET.
Public/Granted literature
- US20120120531A1 LOW LEAKAGE ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2012-05-17
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