Invention Grant
- Patent Title: Sense operation in a memory device
- Patent Title (中): 存储设备中的感应操作
-
Application No.: US13009540Application Date: 2011-01-19
-
Publication No.: US08374028B2Publication Date: 2013-02-12
- Inventor: Yijie Zhao , Akira Goda , Mark A. Helm
- Applicant: Yijie Zhao , Akira Goda , Mark A. Helm
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/00
- IPC: G11C16/00
Abstract:
Methods for sensing and memory devices are disclosed. One such method for sensing determines a threshold voltage of an n-bit memory cell that is adjacent to an m-bit memory cell to be sensed. A control gate of the m-bit memory cell to be sensed is biased with a sense voltage adjusted responsive to the determined threshold voltage of the n-bit memory cell.
Public/Granted literature
- US20120182797A1 SENSE OPERATION IN A MEMORY DEVICE Public/Granted day:2012-07-19
Information query
