Invention Grant
- Patent Title: Method of operating nonvolatile memory device
- Patent Title (中): 操作非易失性存储器件的方法
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Application No.: US12618973Application Date: 2009-11-16
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Publication No.: US08374036B2Publication Date: 2013-02-12
- Inventor: Byoung Kwan Jeong , Chul Woo Yang
- Applicant: Byoung Kwan Jeong , Chul Woo Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0113425 20081114; KR10-2009-0058495 20090629
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of operating a nonvolatile memory device comprises reading erase number information which is updated and stored whenever erasure is performed, setting program start voltages and step voltages based on the erase number information, and performing a program operation based on the program start voltages and the step voltages.
Public/Granted literature
- US20100124122A1 METHOD OF OPERATING NONVOLATILE MEMORY DEVICE Public/Granted day:2010-05-20
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