Invention Grant
- Patent Title: Erase process for use in semiconductor memory device
- Patent Title (中): 用于半导体存储器件的擦除过程
-
Application No.: US12773503Application Date: 2010-05-04
-
Publication No.: US08374038B2Publication Date: 2013-02-12
- Inventor: Chuan-Ying Yu , Chun-Hsiung Hung , Ken-Hui Chen
- Applicant: Chuan-Ying Yu , Chun-Hsiung Hung , Ken-Hui Chen
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A method of erasing memory cells of a memory device includes programming memory cells if the erasing procedure is suspended. The erasing procedure can include pre-programming, erasing, and soft-programming of memory cells in a selected memory unit. If a suspend command is received, for example to allow for a read operation of memory cells of another unit of memory, the erasing procedure stops the pre-programming, erasing, or soft-programming, and proceeds with programming one or more memory cells of the memory unit that was being erased.
Public/Granted literature
- US20110273936A1 ERASE PROCESS FOR USE IN SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-11-10
Information query