Invention Grant
US08374041B2 Transfer circuit, nonvolatile semiconductor device using the same, and transfer method of the same
失效
传输电路，使用其的非易失性半导体器件及其传输方法
- Patent Title: Transfer circuit, nonvolatile semiconductor device using the same, and transfer method of the same
- Patent Title (中): 传输电路，使用其的非易失性半导体器件及其传输方法
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Application No.: US13039734Application Date: 2011-03-03
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Publication No.: US08374041B2Publication Date: 2013-02-12
- Inventor: Hiromitsu Komai
- Applicant: Hiromitsu Komai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-053598 20100310
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/00
Abstract:
According to one embodiment, a transfer circuit includes a first inverter, a second inverter, a first line, a second line, a first holder, and a second holder. The first inverter inverts data at a first node and transfers the inverted data to a second node. The second inverter inverts the data at the second node and transfers the inverted data to the first node. The first line connected to the first node. The second line connected to the second node. The first holder may output data to the first node. The second holder may output data to the second node. When the first holder outputs the data to the first line, the first and second inverters are turned off. When the second holder outputs the data to the first line through the second node, the first inverter is turned off.
Public/Granted literature
- US20110222349A1 TRANSFER CIRCUIT, NONVOLATILE SEMICONDUCTOR DEVICE USING THE SAME, AND TRANSFER METHOD OF THE SAME Public/Granted day:2011-09-15
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