Invention Grant
- Patent Title: Sense amplifier and semiconductor memory device using it
- Patent Title (中): 感应放大器和使用它的半导体存储器件
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Application No.: US12453199Application Date: 2009-05-01
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Publication No.: US08374043B2Publication Date: 2013-02-12
- Inventor: Hyun-Bae Lee , Sang-Woong Shin
- Applicant: Hyun-Bae Lee , Sang-Woong Shin
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0118670 20081127
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A sense amplifier having a pre-amplifier and a main-amplifier is disclosed. The pre-amplifier is connected to paired data line, senses and amplifies data on the paired data line using voltage mode and outputting a pair of differential signal. The main-amplifier is connected to the paired data line, senses and amplifies data on the paired data line using current mode and generating a first amplified signal, senses and amplifies the first amplified signal using voltage mode in response to the pair of differential signal, and outputting an amplified data.
Public/Granted literature
- US20100128545A1 Sense amplifier and semiconductor memory device using it Public/Granted day:2010-05-27
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