Invention Grant
- Patent Title: Multi-port memory using single-port memory cells
- Patent Title (中): 使用单端口存储单元的多端口存储器
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Application No.: US13153392Application Date: 2011-06-04
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Publication No.: US08374050B2Publication Date: 2013-02-12
- Inventor: Ting Zhou , Ephrem Wu , Sheng Liu , Hyuck Jin Kwon
- Applicant: Ting Zhou , Ephrem Wu , Sheng Liu , Hyuck Jin Kwon
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G06F13/00 ; G06F13/28

Abstract:
A memory operative to provide multi-port functionality includes multiple single-port memory cells forming a first memory array. The first memory array is organized into multiple memory banks, each of the memory banks comprising a corresponding subset of the single-port memory cells. The memory further includes a second memory array including multiple multi-port memory cells and is operative to track status information of data stored in corresponding locations in the first memory array. At least one cache memory is connected with the first memory array and is operative to store data for resolving concurrent read and write access conflicts in the first memory array. The memory includes a controller operative: to receive the status information and to determine a validity of data stored in the first memory array as a function of the status information; to control a manner in which data is stored in the memory for avoiding data overflow in the cache memory; and to resolve concurrent read and write access conflicts in the first memory array during the same memory cycle.
Public/Granted literature
- US20110310691A1 Multi-Port Memory Using Single-Port Memory Cells Public/Granted day:2011-12-22
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