Invention Grant
- Patent Title: Method for the double sided polishing of a semiconductor wafer
- Patent Title (中): 半导体晶片的双面抛光方法
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Application No.: US12771030Application Date: 2010-04-30
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Publication No.: US08376811B2Publication Date: 2013-02-19
- Inventor: Juergen Schwandner
- Applicant: Juergen Schwandner
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kusham P.C.
- Priority: DE102009030292 20090624
- Main IPC: B24B1/00
- IPC: B24B1/00

Abstract:
Semiconductor wafers are double sided polished by a method of polishing a frontside of the wafer in a first step with a polishing pad with fixed abrasive and simultaneously polishing a backside of the wafer with a polishing pad containing no abrasive, but during which an abrasive polishing agent is introduced between the polishing pad and the backside of the wafer, inverting the wafer, and then in a second step polishing the backside of the wafer with a polishing pad containing fixed abrasive and simultaneously polishing the frontside of the wafer with a polishing pad containing no fixed abrasive, a polishing agent containing abrasive being introduced between the polishing pad and the frontside of the semiconductor wafer.
Public/Granted literature
- US20100330881A1 Method For The Double Sided Polishing Of A Semiconductor Wafer Public/Granted day:2010-12-30
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