Invention Grant
US08376811B2 Method for the double sided polishing of a semiconductor wafer 有权
半导体晶片的双面抛光方法

  • Patent Title: Method for the double sided polishing of a semiconductor wafer
  • Patent Title (中): 半导体晶片的双面抛光方法
  • Application No.: US12771030
    Application Date: 2010-04-30
  • Publication No.: US08376811B2
    Publication Date: 2013-02-19
  • Inventor: Juergen Schwandner
  • Applicant: Juergen Schwandner
  • Applicant Address: DE Munich
  • Assignee: Siltronic AG
  • Current Assignee: Siltronic AG
  • Current Assignee Address: DE Munich
  • Agency: Brooks Kusham P.C.
  • Priority: DE102009030292 20090624
  • Main IPC: B24B1/00
  • IPC: B24B1/00
Method for the double sided polishing of a semiconductor wafer
Abstract:
Semiconductor wafers are double sided polished by a method of polishing a frontside of the wafer in a first step with a polishing pad with fixed abrasive and simultaneously polishing a backside of the wafer with a polishing pad containing no abrasive, but during which an abrasive polishing agent is introduced between the polishing pad and the backside of the wafer, inverting the wafer, and then in a second step polishing the backside of the wafer with a polishing pad containing fixed abrasive and simultaneously polishing the frontside of the wafer with a polishing pad containing no fixed abrasive, a polishing agent containing abrasive being introduced between the polishing pad and the frontside of the semiconductor wafer.
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