Invention Grant
- Patent Title: Method of forming an undercut microstructure
- Patent Title (中): 形成底切微结构的方法
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Application No.: US12842334Application Date: 2010-07-23
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Publication No.: US08377320B2Publication Date: 2013-02-19
- Inventor: Tzyy-Jiann Wang , Yueh-Hsun Tsou
- Applicant: Tzyy-Jiann Wang , Yueh-Hsun Tsou
- Applicant Address: TW Taipei
- Assignee: National Taipei University of Technology
- Current Assignee: National Taipei University of Technology
- Current Assignee Address: TW Taipei
- Agency: Occhiuti Rohlicek & Tsao LLP
- Priority: TW99111450A 20100413
- Main IPC: C03C10/00
- IPC: C03C10/00 ; C03C25/68 ; C23F1/00 ; H01L21/302 ; H01L21/461 ; H01L21/00

Abstract:
A method of forming an undercut microstructure includes: forming an etch mask on a top surface of a substrate; forming, on a top surface of the etch mask, an ion implantation mask having a top surface that is smaller than the top surface of the etch mask and that does not extend beyond the top surface of the etch mask; ion implanting the substrate in the presence of the etch mask and the ion implantation mask so that a damaged region is generated at a depth below an area of the surface that is not masked by the ion implantation mask; and etching the surface of the substrate until the damaged region is removed.
Public/Granted literature
- US20110250397A1 METHOD OF FORMING AN UNDERCUT MICROSTRUCTURE Public/Granted day:2011-10-13
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