Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US12843977Application Date: 2010-07-27
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Publication No.: US08377742B2Publication Date: 2013-02-19
- Inventor: Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano
- Applicant: Tetsufumi Kawamura , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles and Stockbridge P.C.
- Priority: JP2009-203274 20090903
- Main IPC: H01L21/16
- IPC: H01L21/16
Abstract:
In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.
Public/Granted literature
- US20110049508A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-03-03
Information query
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