Invention Grant
- Patent Title: Method for fabricating a non-volatile memory device
- Patent Title (中): 用于制造非易失性存储器件的方法
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Application No.: US13338048Application Date: 2011-12-27
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Publication No.: US08377782B2Publication Date: 2013-02-19
- Inventor: Young Ok Hong , Myung Shik Lee
- Applicant: Young Ok Hong , Myung Shik Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0102298 20071010
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.
Public/Granted literature
- US20120094451A1 Method for Fabricating a Non-volatile Memory Device Public/Granted day:2012-04-19
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