Methods for fabricating semiconductor devices

Invention Grant

US08377786B2 Methods for fabricating semiconductor devices 有权

Title translation: 制造半导体器件的方法

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Patent Title: Methods for fabricating semiconductor devices
Patent Title (中): 制造半导体器件的方法
Application No.: US13020369

Application Date: 2011-02-03
Publication No.: US08377786B2

Publication Date: 2013-02-19
Inventor: Stephan-Detlef Kronholz , Peter Javorka , Roman Boschke
Applicant: Stephan-Detlef Kronholz , Peter Javorka , Roman Boschke
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES, Inc.
Current Assignee: GLOBALFOUNDRIES, Inc.
Current Assignee Address: KY Grand Cayman
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/3115

Methods for fabricating semiconductor devices

Abstract:

Embodiments of methods for fabricating the semiconductor devices are provided. The method includes forming a layer of spacer material over a semiconductor region that includes a first gate electrode structure and a second gate electrode structure. Carbon is introduced into a portion of the layer covering the semiconductor region about the first gate electrode structure or the second gate electrode structure. The layer is etched to form a first sidewall spacer about the first gate electrode structure and a second sidewall spacer about the second gate electrode structure.

Abstract(Chinese):

提供了制造半导体器件的方法的实施例。该方法包括在包括第一栅电极结构和第二栅电极结构的半导体区上形成间隔物层。将碳引入围绕第一栅电极结构或第二栅电极结构覆盖半导体区的层的一部分。蚀刻该层以围绕第一栅极电极结构形成第一侧壁隔离物，并围绕第二栅电极结构形成第二侧壁隔离物。

Public/Granted literature

US20120202326A1 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES Public/Granted day:2012-08-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀