Invention Grant
- Patent Title: Alternating-doping profile for source/drain of a FET
- Patent Title (中): FET的源极/漏极的交替掺杂分布
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Application No.: US13155957Application Date: 2011-06-08
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Publication No.: US08377787B2Publication Date: 2013-02-19
- Inventor: Chen-Liang Chu , Chun-Ting Liao , Fei-Yuh Chen , Tsung-Yi Huang
- Applicant: Chen-Liang Chu , Chun-Ting Liao , Fei-Yuh Chen , Tsung-Yi Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the semiconductor substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.
Public/Granted literature
- US20110237041A1 ALTERNATING-DOPING PROFILE FOR SOURCE/DRAIN OF A FET Public/Granted day:2011-09-29
Information query
IPC分类:
