Invention Grant
- Patent Title: Method of manufacturing SOI substrate
- Patent Title (中): 制造SOI衬底的方法
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Application No.: US13070512Application Date: 2011-03-24
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Publication No.: US08377799B2Publication Date: 2013-02-19
- Inventor: Shunpei Yamazaki , Toru Takayama , Mizuho Sato , Noriaki Uto
- Applicant: Shunpei Yamazaki , Toru Takayama , Mizuho Sato , Noriaki Uto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-084278 20100331
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond substrate and the base substrate with an insulating layer positioned therebetween; a step of splitting the bond substrate at the embrittlement region to leave a semiconductor layer bonded to the base substrate; a step of disposing the semiconductor layer in front of a semiconductor target containing the same semiconductor material as the semiconductor layer; and a step of alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized.
Public/Granted literature
- US20110244652A1 METHOD OF MANUFACTURING SOI SUBSTRATE Public/Granted day:2011-10-06
Information query
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