Split word line fabrication process

Invention Grant

US08377813B2 Split word line fabrication process 有权

Title translation: 分割字线制作工艺

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Patent Title: Split word line fabrication process
Patent Title (中): 分割字线制作工艺
Application No.: US12870612

Application Date: 2010-08-27
Publication No.: US08377813B2

Publication Date: 2013-02-19
Inventor: Chih-Hao Lin
Applicant: Chih-Hao Lin
Applicant Address: TW Houli Township, Taichung County
Assignee: Rexchip Electronics Corporation
Current Assignee: Rexchip Electronics Corporation
Current Assignee Address: TW Houli Township, Taichung County
Agency: Muncy, Geissler, Olds & Lowe, PLLC
Main IPC: H01L21/3205
IPC: H01L21/3205

Abstract:

A method for forming a buried split word line structure is provided. The method comprises the following steps. At first, a substrate having a trench therein is provided. Two liners are formed to a first thickness on sidewalls of the trench. Then, the trench is filled with a first insulating layer to a first height. The two liners are removed. Finally, a conductive material is deposited to a second height between and adjacent to the first insulating layer and the trench. Here, the first height is greater than the second height.

Abstract(Chinese):

提供了一种用于形成掩埋分割字线结构的方法。该方法包括以下步骤。首先，提供其中具有沟槽的衬底。两个衬垫在沟槽的侧壁上形成为第一厚度。然后，将沟槽填充到第一高度的第一绝缘层。两个衬垫被移除。最后，将导电材料沉积到第一绝缘层和沟槽之间的第二高度上并与其相邻。这里，第一高度大于第二高度。

Public/Granted literature

US20120052668A1 SPLIT WORD LINE FABRICATION PROCESS Public/Granted day:2012-03-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）