Invention Grant
- Patent Title: Aftertreatment method for amorphous carbon film
- Patent Title (中): 无定形碳膜后处理方法
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Application No.: US12308828Application Date: 2007-07-04
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Publication No.: US08377818B2Publication Date: 2013-02-19
- Inventor: Hiraku Ishikawa
- Applicant: Hiraku Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2006-185327 20060705
- International Application: PCT/JP2007/063376 WO 20070704
- International Announcement: WO2008/004584 WO 20080110
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/302

Abstract:
The present invention is an aftertreatment method further applied to an amorphous carbon film to which a treatment including heating is performed after the film has been formed on a substrate. The treatment of preventing oxidation of the amorphous carbon film is performed immediately after the treatment including heating.
Public/Granted literature
- US20100062612A1 Aftertreatment Method for Amorphous Carbon Film Public/Granted day:2010-03-11
Information query
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