Invention Grant
- Patent Title: Flexible optoelectronic device having inverted electrode structure and method for making the same
- Patent Title (中): 具有反转电极结构的柔性光电器件及其制造方法
-
Application No.: US12612670Application Date: 2009-11-04
-
Publication No.: US08378337B2Publication Date: 2013-02-19
- Inventor: Ching-Fuh Lin , Kao-Hua Tsai
- Applicant: Ching-Fuh Lin , Kao-Hua Tsai
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Priority: TW98126975A 20090811
- Main IPC: H01L51/54
- IPC: H01L51/54
Abstract:
A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.
Public/Granted literature
- US20110037055A1 Flexible Optoelectronic Device Having Inverted Electrode Structure and Method for Making the same Public/Granted day:2011-02-17
Information query
IPC分类:
